AON7246 60v n-channel mosfet v ds i d (at v gs =10v) 34.5a r ds(on) (at v gs =10v) < 15m w r ds(on) (at v gs =4.5v) < 19m w 100% uis tested 100% r g tested symbol v ds v v 20 gate-source voltage drain-source voltage 60 the AON7246 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v g d s top view 1 2 3 4 8 7 6 5 v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 3.1 13.9 t c =100c junction and storage temperature range -55 to 150 c/w r q ja 30 60 95 40 thermal characteristics units maximum junction-to-ambient a a t a =25c pulsed drain current c continuous drain current i d 34.5 22 v 20 gate-source voltage c i dsm a t a =70c continuous drain current 20 10 a 20 t c =25c t c =100c w power dissipation a p dsm w t a =70c 34.7 2 t a =25c power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c 8 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3 75 3.6 general description product summary www.freescale.net.cn 1/6
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 95 a 12 15 t j =125c 20.5 26 15 19 m w g fs 75 s v sd 0.72 1 v i s 35 a c iss 1070 1340 1610 pf c oss 85 123 160 pf c rss 6 10 14 pf r g 0.7 1.5 2.3 w q g (10v) 16 21 25 nc q g (4.5v) 7 9 11 nc q gs 4.7 nc q gd 2.6 nc t d(on) 6 ns t r 2.5 ns t d(off) 22 ns t 2.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =30v, i d =10a gate source charge gate drain charge total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =3.0 w , r gen =3 w turn-off fall time zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =9a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =10a r ds(on) static drain-source on-resistance i dss m a v ds =v gs , i d =250 m a v ds =0v, v gs =20v t f 2.5 ns t rr 10.5 15.5 20.5 ns q rr 38.5 55.5 72.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =10a, di/dt=500a/ m s i f =10a, di/dt=500a/ m s turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environme nt with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperatur e of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking i s used. c. repetitive rating, pulse width limited by junction t emperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal i mpedance which is measured with the device mounted to a l arge heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environme nt with t a =25 c. AON7246 www.freescale.net.cn 2/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 8 10 12 14 16 18 20 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e+02 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =9a v gs =10v i d =10a 35 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4v 6v 10v 4.5v 3.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 5 10 15 20 25 30 35 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =10a 25 c 125 c AON7246 www.freescale.net.cn 3/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) 10 c oss c rss v ds =30v i d =10a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3.6 c/w AON7246 www.freescale.net.cn 4/6
typical electrical and thermal characteristics 17 5 2 10 0 18 10 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 14: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal impe dance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w AON7246 www.freescale.net.cn 5/6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr AON7246 www.freescale.net.cn 6/6
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